Semikonduktor datasheet

CREE DATASHEET

PartNoTagagawaPaglalarawan
W4NXD8C-S000CreeDiameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C470-XB900-BCree150mW; colorblue; 3.7-4.0V; Xbright InGaN LED
W6NXD3K-0000CreeDiameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C460-CB290-E1000Cree3.0mW; colordeep blue; 3.3-3.7V; super bright InGaN LED
W4NXD8D-0000CreeDiameter 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C405-XB900-BCree250mW; colorblue; 3.7-4.0V; Xbright InGaN LED
C450-CB290-E1000Cree3.5mW; colordeep blue; 3.3-3.7V; super bright InGaN LED
W4SRD0R-0D00CreeDiameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W4NXD8C-L000CreeDiameter 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C460-CB230-E1000Cree1.3W; colordeep blue; 3.7V; low current InGaN LED
W6PXD3O-0000CreeDiameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C405-XB290-E400-ACree17.0mW; colorUV; 3.7-4.0V; Xbright InGaN LED
W4SRD8R-0D00CreeDiameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C470-UB290-E1000Cree5.0mW; colorblue; 3.5-3.9V; ultra bright InGaN LED
CXXX-MB290-E400Cree5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting
W6NRD0X-0000CreeDiameter 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CRF-22010-101Cree62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
W4NXD8C-0000CreeDiameter 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CXXX-CB230-E1000Cree5V; 125mA; super bright LED. For communication handsets, backlighting, high resolution video displays
C470-CB290-E1000Cree2.5mW; colorblue; 3.3-3.7V; super bright InGaN LED
C525-CB290-E1000Cree1.5mW; colorgreen; 3.3-3.7V; super bright InGaN LED
C430-UB290-E1000Cree2.0mW; 30mA; super bright LED for full color displays & moving message signs
C525-UB290-E1000Cree3.0mW; colorgreen; 3.5-3.9V; ultra bright InGaN LED
C505-XB290-E1000-BCree11.0mW; colorgreen; 3.8-4.0V; Xbright InGaN LED
W4NXE4C-0D00CreeDiameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C460-MB290-E1000Cree11.0mW; colordeep blue; 3.7-4.0V; mega bright InGaN LED
CRF-22010-TBCree50VDC ;66W; evaluation board for CRF-22010 version A (narrowband)
CXXX-MB290-E1000Cree5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting
W4NXE8C-0D00CreeDiameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C430-CB290-E1000Cree1150uW; 30mA; super bright LED for full color displays & moving message signs
C395-XB290-E400-ACree16.0mW; colorUV; 3.7-4.0V; Xbright InGaN LED
CXXX-CB290-S0100Cree5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting
W6NXD0KLSR-0000CreeDiameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C405-MB290-E400Cree12.0mW; colorUV; 3.7-4.0V; mega bright InGaN LED
C400-MB290-E400Cree12.0mW; colorUV; 3.7-4.0V; mega bright InGaN LED
W4NXD8D-S000CreeDiameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C395-XB290-E400-BCree16.0mW; colorUV; 3.7-4.0V; Xbright InGaN LED
C505-UB290-E1000Cree3.5mW; colorgreen; 3.5-3.9V; ultra bright InGaN LED
C470-UB291-E1000Cree5.0mW; colorblue; 3.5-3.9V; ultra bright InGaN LED
CXXX-UB29X-S0100Cree5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting
C405-XB290-E400-BCree17.0mW; colorUV; 3.7-4.0V; Xbright InGaN LED
C505-CB290-E1000Cree2.0mW; colorgreen; 3.3-3.7V; super bright InGaN LED
C527-XB290-E1000-BCree9.0mW; colorgreen; 3.8-4.0V; Xbright InGaN LED
C395-MB290-E400Cree11.0mW; colorUV; 3.7-4.0V; mega bright InGaN LED
W4NRD0X-0000CreeDiameter 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W6NXD3L-0000CreeDiameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C470-CB230-E1000Cree1.3W; colordeep blue; 3.7V; low current InGaN LED
C490-UB290-E1000Cree4.8mW; coloraqua blue; 3.5-3.9V; ultra bright InGaN LED
W4TRD8R-0D00CreeDiameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C527-XB290-E1000-ACree9.0mW; colorgreen; 3.8-4.0V; Xbright InGaN LED
CXXX-UB290-S1000Cree5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting
C460-XB290-E1000-BCree14.0mW; colorblue; 3.7-4.0V; Xbright InGaN LED
W4NXE8C-LD00CreeDiameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C470-MB290-E1000Cree10.0mW; colorblue; 3.7-4.0V; mega bright InGaN LED
C470-XB290-E1000-ACree14.0mW; colorblue; 3.7-4.0V; Xbright InGaN LED
W4NXE8C-SD00CreeDiameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C503-MB290-E1000Cree8.0mW; colorgreen; 3.7-4.0V; mega bright InGaN LED
CXXX-MB290-S0100Cree5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting
C460-UB290-E1000Cree5.5mW; colordeep blue; 3.5-3.9V; ultra bright InGaN LED
W4NRD8C-U000CreeDiameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C460-XB290-E1000-ACree15.0mW; colordeep blue; 3.7-4.0V; Xbright InGaN LED
C405-XB900-ACree250mW; colorblue; 3.7-4.0V; Xbright InGaN LED
CRF-22010-001Cree62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
W4NXE4C-SD00CreeDiameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C527-MB290-E1000Cree7.0mW; colorgreen; 3.7-4.0V; mega bright InGaN LED
W4TRD0R-0D00CreeDiameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C490-CB290-E1000Cree2.5mW; coloraqua blue; 3.3-3.7V; super bright InGaN LED
C525-CB230-E1000Cree0.650W; colorgreen; 3.7V; low current InGaN LED
W4NXE4C-LD00CreeDiameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W6NXD3J-0000CreeDiameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W6NXD0K-0000CreeDiameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C470-XB900-ACree150mW; colorblue; 3.7-4.0V; Xbright InGaN LED
C505-XB290-E1000-ACree11.0mW; colorgreen; 3.8-4.0V; Xbright InGaN LED
W4NRE0X-0D00CreeDiameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W4TXE0X-0D00CreeDiameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W6NRE0X-0000CreeDiameter 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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