2S DATASHEET
| PartNo | Tagagawa | Paglalarawan |
|---|---|---|
| 2SC3279P | BJT | |
| 2SC3279_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications |
| 2SC3280 | Wing Shing Computer Components | PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER CONVERTER) |
| 2SC3280F | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 12A I(C) | SOT-186VAR | |
| 2SC3281 | Mospec Semiconductor | POWER TRANSISTORS(15A,200V,150W) |
| 2SC3281F | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SOT-186VAR | |
| 2SC3281O | Mospec Semiconductor | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | TO-247VAR |
| 2SC3281R | Mospec Semiconductor | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | TO-247VAR |
| 2SC3281_PMC | ||
| 2SC3282A | TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 7.5A I(C) | SOT-161 | |
| 2SC3283A | TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 15A I(C) | SOT-161 | |
| 2SC3284 | Sanken electric | Silicon Epitaxial Planar Transistor(Audio General Purpose) |
| 2SC3285 | Inchange | Silicon Power Transistors |
| 2SC3286-M | SILICON | SILICON POWER TRANSISTOR |
| 2SC3286M | TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 24A I(C) | SOT-289VAR | |
| 2SC3292 | Sanyo Semicon Device | |
| 2SC3293 | Sanyo Semicon Device | Driver Applications |
| 2SC3294 | Sanyo Semicon Device | |
| 2SC3295 | Toshiba Semiconductor | |
| 2SC3295A | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SC-59 | |
| 2SC3295B | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SC-59 | |
| 2SC3296 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC3297 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC3298 | Toshiba Semiconductor | SILICON EPITAXIAL TYPE |
| 2SC3298A | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC3298B | Toshiba Semiconductor | SILICON EPITAXIAL TYPE |
| 2SC3298BO | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 1.5A I(C) | TO-220VAR | |
| 2SC3298BY | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 1.5A I(C) | TO-220VAR | |
| 2SC3299 | Motorola, | |
| 2SC3300 | Inchange | Silicon Power Transistor |
| 2SC3301 | TRANSISTOR | BJT | NPN | 7.5V V(BR)CEO | 80MA I(C) | SOT-89 | |
| 2SC3302 | TOSHIBA | TRANSISTOR SILICON EPITAXIAL PLANAR TYPE VHF-UHF BAND NOISE AMPLIFIER APPLICATION |
| 2SC3303 | Toshiba Semiconductor | EPITAXIAL TYPE (HIGH CURRENT SWITCING APPLICATIONS) |
| 2SC3303O | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-251AA | |
| 2SC3303Y | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-251AA | |
| 2SC3306 | Toshiba | SWITCHING TEGULATOR HIGH VOLTAGE SWITCHING APPLICATIONS |
| 2SC3307 | Toshiba | HIGH SPEED HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS |
| 2SC330706 | Toshiba Semiconductor | Silicon Triple Diffused Type High-Speed High-Voltage Switching Applications |
| 2SC3307_06 | Toshiba Semiconductor | Silicon NPN Triple Diffused Type High-Speed and High-Voltage Switching Applications |
| 2SC3308 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220VAR | |
| 2SC3309 | SILICON TRIPLE DIFFUSED TYPE | |
| 2SC3310 | Toshiba Semiconductor | SILICON TRIPLE DIFFUSED TYPE |
| 2SC3311A | Panasonic Semiconductor | Silicon epitaxial planer type(For low-frequency amplification) |
| 2SC3311AQ | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SC-72 | |
| 2SC3311AR | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SC-72 | |
| 2SC3311AS | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SC-72 | |
| 2SC3312 | Matsshita Panasonic | Transistor |
| 2SC3312R | TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 100MA I(C) | SPAK | |
| 2SC3312S | TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 100MA I(C) | SPAK | |
| 2SC3312T | TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 100MA I(C) | SPAK | |
| 2SC3313 | Matsshita Panasonic | Transistor |
| 2SC3314 | Matsshita Panasonic | Transistor |
| 2SC3314B | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-72 | |
| 2SC3314C | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-72 | |
| 2SC3315 | Matsshita Panasonic | Transistor |
| 2SC3317 | ETC[ETC] | SUPER HIGH SPEED SWITCHING TRANSISTORS |
| 2SC3318 | Fuji Electric | TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING |
| 2SC3319 | ETC[ETC] | SUPER HIGH SPEED SWITCHING TRANSISTORS |
| 2SC332 | ||
| 2SC3320 | Fuji Electric | TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING |
| 2SC3320-T3P-F-T | HIGH VOLTAGE HIGH SPEED SWITCHING | |
| 2SC3320L-T3P-F-T | HIGH VOLTAGE HIGH SPEED SWITCHING | |
| 2SC3321 | ETC[ETC] | High speed switching transistor |
| 2SC3322 | Hitachi Semiconductor | Silicon Triple Diffused |
| 2SC3324 | Toshiba Semiconductor | EPITAXIAL TYPE (AUDIO FREQUENCY NOISE AMPLIFIER APPLICATIONS) |
| 2SC332407 | Toshiba Semiconductor | Silicon Epitaxial Type process) Audio Frequency Noise Amplifier Applications |
| 2SC3324BL | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SC-59 | |
| 2SC3324GR | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SC-59 | |
| 2SC3324_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
| 2SC3325 | Guangdong | Silicon Epitaxial |
| 2SC332507 | Toshiba Semiconductor | Silicon Epitaxial Type process) Audio Frequency Power Amplifier Applications |
| 2SC3325_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications |
| 2SC3326 | Toshiba Semiconductor | EPITAXIAL TYPE MUTING SWITCHING APPLICATIONS) |
| 2SC332607 | Toshiba Semiconductor | Silicon Epitaxial Type process) Muting Switching Applications |
| 2SC3326A | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-59 | |
| 2SC3326B | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-59 | |
| 2SC3326_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications |
| 2SC3327 | Toshiba | MUTING SWITCHING APPLICATIONS |
| 2SC3327A | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SPAK | |
| 2SC3327B | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SPAK | |
| 2SC3328 | Toshiba | POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS |
| 2SC332806 | Toshiba Semiconductor | EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) |
| 2SC3328O | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | TO-92VAR | |
| 2SC3328Y | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | TO-92VAR | |
| 2SC3328_06 | Toshiba Semiconductor | NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) |
| 2SC3329 | Toshiba | NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FIRST STAGES HEAD AMPLIFIERS |
| 2SC3329BL | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC3329GR | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC3330 | Sanyo Semicon Device | PNP/NPN Epitaxial Planar Silicon Transistors |
| 2SC33306 | Mospec | 10Ampere NPN silicon power transistor |
| 2SC3330R | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SPAK | |
| 2SC3330S | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SPAK | |
| 2SC3330T | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SPAK | |
| 2SC3330U | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SPAK | |
| 2SC3330V | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SPAK | |
| 2SC3331 | Sanyo Semicon Device | Applications |
| 2SC3331R | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-92 | |
| 2SC3331S | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-92 | |
| 2SC3331T | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-92 |
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