Semikonduktor datasheet

2S DATASHEET

PartNoTagagawaPaglalarawan
2SC3331UTRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-92
2SC3331VTRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-92
2SC3332Sanyo PNP/NPN Epitaxial Planar Silicon Transistors
2SC3332RTRANSISTOR | BJT | NPN | 160V V(BR)CEO | 700MA I(C) | TO-92
2SC3332STRANSISTOR | BJT | NPN | 160V V(BR)CEO | 700MA I(C) | TO-92
2SC3332TTRANSISTOR | BJT | NPN | 160V V(BR)CEO | 700MA I(C) | TO-92
2SC3333Toshiba HIGH VOLTAGE SWITCHING APPLICATIONS COLOR CHROMA OUTPUT APPLICATIONS
2SC3334TOSHIBA TRANSISTOR SILICON TRIPLE DIFFUSED TYPE PROCESS) HIGH VOLTAGE SWITCHING COLOR CHROMA OUTPUT APPLICATIONS
2SC3336hitachi Silicon Triple Diffused
2SC3337
2SC3338Hitachi Semiconductor Silicon Epitaxial
2SC3339TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-236
2SC3340TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23
2SC3341TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | SOT-23
2SC3344TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 8A I(C) | TO-220VAR
2SC3345Savantic,Silicon Power Transistors
2SC3346Toshiba Semiconductor SILICON EPITAXIAL TYPE(PCT PROCESS)
2SC3351-LNECFor amplify low noise and high frequency.
2SC3351-T1BNECFor amplify low noise and high frequency.
2SC3351-T2BNECFor amplify low noise and high frequency.
2SC3352Inchange Semiconductor Company Limited Silicon Power Transistors
2SC3352ATRANSISTOR | BJT | NPN | 500V V(BR)CEO | 1.5A I(C) | SOT-186
2SC3353InchangeSilicon Power Transistor
2SC3353ATRANSISTOR | BJT | NPN | 500V V(BR)CEO | 5A I(C) | SOT-186
2SC3354PANASONIC[Panasonic Semiconductor] Silicon epitaxial planer type(For high-frequency amplification/oscillation/mixing)
2SC3354STRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | SIP
2SC3354TTRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | SIP
2SC3355Continental Device India TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-92
2SC3355(NE85632)Discrete
2SC3355-TNECFor amplify low noise and high frequency
2SC3355KNECTRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-92
2SC3356California Eastern Laboratories UHF/Microwave
2SC3356(NE85633)Discrete
2SC3356-T1BNECFor amplify low noise and high frequency
2SC3356-T2BNECFor amplify low noise and high frequency
2SC3356-VMNECFor amplify low noise and high frequency
2SC3356FSeCoS Halbleitertechnologie GmbH Silicon Plastic Encapsulated Transistor
2SC3356QNECTRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
2SC3356RNECTRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
2SC3356R23NECTRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
2SC3356R24NECTRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
2SC3356R25NECTRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
2SC3356SNECTRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
2SC3356WGalaxy Semi-Conductor Holdings Limited Silicon Epitaxial Planar Transistor
2SC3357
2SC3357(NE85634)Discrete
2SC3357-T1NECFor amplify high frequency and low noise.
2SC3357-T2SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
2SC3357RENECTRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243
2SC3357RFNECTRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243
2SC3357RHNECTRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243
2SC3358Unisonic Technologies
2SC3359TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | TO-92
2SC3359PTRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | TO-92
2SC3359QTRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | TO-92
2SC3359RTRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | TO-92
2SC3359SROHM[Rohm] Power Transistor 0.3A)
2SC3359SPTRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SPAK
2SC3359SQTRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SPAK
2SC3359SRTRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SPAK
2SC3359STPQTRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SPAK
2SC3359STPRTRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SPAK
2SC3360
2SC3360-LNECSilicon transistor
2SC3360-T1BNECSilicon transistor
2SC3360-T2BNECSilicon transistor
2SC3360N15BJT
2SC3360N16BJT
2SC3360N17BJT
2SC3361Sanyo PNP/NPN Epitaxial Planar Silicon Transistors
2SC3361-4TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23
2SC3361-5TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23
2SC3361-6TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23
2SC3365Hitachi Semiconductor
2SC3369
2SC3371InchangeSilicon Power Transistor
2SC3374Hitachi Semiconductor AMPLIFIER TUNER AMPLIFIER
2SC3376Toshiba SWITCHING REGULATOR HIGH VOLTAGE SWITCHING APPLICATIONS
2SC3377Rohm 2SC2673
2SC3378TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | SPAK
2SC3379Mitsubishi EPITAXIAL PLANAR TYPE
2SC3380hitachi Silicon Triple Diffused
2SC3380ASTR-ERenesas Technology Corp Silicon Triple Diffused
2SC3381Toshiba Semiconductor EPITAXIAL TYPE NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED CASCODE, CURRENT MIRROR CIRCUIT FIRST STAGE MAIN AMPLIFIERS)
2SC3381BLTRANSISTOR | BJT | PAIR | NPN | 80V V(BR)CEO | 100MA I(C) | ZIP
2SC3381GRTRANSISTOR | BJT | PAIR | NPN | 80V V(BR)CEO | 100MA I(C) | ZIP
2SC3382Sanyo PNP/NPN Epitaxial Planar Silicon Transistors
2SC3382RTRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-92
2SC3382STRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-92
2SC3382TTRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-92
2SC3382UTRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-92
2SC3383Sanyo PNP/NPN Epitaxial Planar Silicon Transistors
2SC3383RTRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-92
2SC3383STRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-92
2SC3383TTRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-92
2SC3383UTRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-92
2SC3387InchangeSilicon Power Transistors
2SC3388InchangeSilicon Power Transistor
2SC3390Hitachi Semiconductor Silicon Epitaxial

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