2N DATASHEET
| PartNo | Tagagawa | Paglalarawan |
|---|---|---|
| 2N5830 | FAIRCHILD[Fairchild Semiconductor] | General Purpose Amplifier |
| 2N583001 | General Purpose Amplifier | |
| 2N5830D26Z | Fairchild Semiconductor | General Purpose Amplifer |
| 2N5830_01 | Fairchild Semiconductor | NPN General Purpose Amplifier |
| 2N5831 | MICRO-ELECTRONICS[Micro Electronics] | SILICON TRANSISTORS |
| 2N5832 | MCC[Micro Commercial Components] | Transistor Plastic-case Bipolar |
| 2N5833 | TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 600MA I(C) | TO-92 | |
| 2N5835 | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | TO-72 | |
| 2N5836 | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 200MA I(C) | TO-46 | |
| 2N5837 | TRANSISTOR | BJT | NPN | 5V V(BR)CEO | 300MA I(C) | TO-46 | |
| 2N5838 | SEME-LAB[Seme | Bipolar Device |
| 2N5839 | ETC[ETC] | Power Transistors |
| 2N5840 | Motorola, | HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
| 2N5841 | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | TO-72 | |
| 2N5842 | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | TO-72 | |
| 2N5843 | ETC | SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
| 2N5844 | ETC | SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
| 2N5845 | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 600MA I(C) | TO-92 | |
| 2N5845A | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 600MA I(C) | TO-92 | |
| 2N5849 | TRANSISTOR | BJT | NPN | 24V V(BR)CEO | 7A I(C) | STX-10 | |
| 2N585 | TRANSISTOR | BJT | NPN | 24V V(BR)CEO | 200MA I(C) | TO-1 | |
| 2N5851 | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-72 | |
| 2N5852 | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-72 | |
| 2N5853 | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-210AC | |
| 2N5854 | COLLECTOR CURRENT AMPS TYPES | |
| 2N5855 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-105 | |
| 2N5856 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-105 | |
| 2N5857 | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-105 | |
| 2N5858 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-105 | |
| 2N5859 | CENTRAL[Central Semiconductor Corp] | Small Signal Transistors |
| 2N586 | TRANSISTOR | BJT | PNP | 250MA I(C) | TO-45(3) | |
| 2N5861 | CENTRAL[Central Semiconductor Corp] | Small Signal Transistors |
| 2N5864 | SEME-LAB[Seme | Bipolar Device Hermetically sealed TO39 Metal Package. |
| 2N5865 | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-39 | |
| 2N5867 | SEME-LAB[Seme | Bipolar Device Hermetically sealed Metal Package |
| 2N5868 | Inchange Semiconductor Company Limited | Silicon PNP Power Transistors |
| 2N5869 | Inchange Semiconductor Company Limited | Silicon NPN Power Transistors |
| 2N587 | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-5 | |
| 2N5870 | SEME-LAB[Seme | Bipolar Device Hermetically sealed Metal Package |
| 2N5871 | SEME-LAB[Seme | Bipolar Device Hermetically sealed Metal Package |
| 2N5872 | SEME-LAB[Seme | Bipolar Device Hermetically sealed Metal Package |
| 2N5873 | SEME-LAB[Seme | Bipolar Device Hermetically sealed Metal Package |
| 2N5874 | SEME-LAB[Seme | Bipolar Device Hermetically sealed Metal Package. |
| 2N5875 | MOSPEC[Mospec Semiconductor] | POWER TRANSISTORS(10A,150W) |
| 2N5876 | MOSPEC[Mospec Semiconductor] | POWER TRANSISTORS(10A150W) |
| 2N5877 | MOSPEC[Mospec Semiconductor] | POWER TRANSISTORS(10A,150W) |
| 2N5878 | Central Semiconductor | Leaded Power Transistor General Purpose |
| 2N5879 | Boca Semiconductor Corporation | COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
| 2N588 | TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 50MA I(C) | TO-30 | |
| 2N5880 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2N5881 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2N5882 | MOSPEC[Mospec Semiconductor] | POWER TRANSISTORS(15A160W) |
| 2N5882-D | Semiconductor | Silicon High-Power Transistor |
| 2N5882/D | Silicon NPN High Power Transistor | |
| 2N5883 | BOCA[Boca Semiconductor Corporation] | COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
| 2N5883-D | Semiconductor | Complementary Silicon High-Power Transistors |
| 2N5883/D | Complementary Silicon High-Power Transistors | |
| 2N5883G | Semiconductor | Complementary Silicon High−Power Transistors |
| 2N5884 | STMicroelectronics | COMPLEMENTARY SILICON HIGH POWER TRANSISTORS |
| 2N5884G | Semiconductor | Complementary Silicon High−Power Transistors |
| 2N5885 | Semi | 25AMPERE COMPLEMENARY |
| 2N5885G | Semiconductor | Complementary Silicon High−Power Transistors |
| 2N5886 | Semi | 25AMPERE COMPLEMENARY |
| 2N5886G | ONSEMI[ON Semiconductor] | Complementary Silicon High−Power Transistors |
| 2N5887 | TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5888 | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5889 | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5890 | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5891 | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5892 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5893 | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5894 | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5895 | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5896 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5897 | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5898 | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5899 | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5900 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5901 | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 7A I(C) | TO-66 | |
| 2N5902 | INTERSIL[Intersil Corporation] | MONOLITHIC DUAL CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
| 2N5903 | INTERSIL[Intersil Corporation] | MONOLITHIC DUAL CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
| 2N5904 | Intersil Corporation | MONOLITHIC DUAL CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
| 2N5905 | INTERSIL[Intersil Corporation] | MONOLITHIC DUAL CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
| 2N5906 | INTERSIL[Intersil Corporation] | MONOLITHIC DUAL CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
| 2N5907 | INTERSIL[Intersil Corporation] | MONOLITHIC DUAL CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
| 2N5908 | Intersil | MONOLITHIC DUAL CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
| 2N5909 | Intersil Corporation | MONOLITHIC DUAL CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
| 2N5910 | Central Semiconductor Corp | SILICON SWITCHING TRANSISTORS |
| 2N5911 | Vishay | Matched N-Channel JFET Pairs |
| 2N5911-12 | Calogic, | Dual N-Channel JFET High Frequency Amplifier |
| 2N5912 | Calogic, | Dual N-Channel JFET High Frequency Amplifier |
| 2N5916 | TRANSISTOR | BJT | NPN | 24V V(BR)CEO | 200MA I(C) | STX-6 | |
| 2N5918 | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 750MA I(C) | STX-6 | |
| 2N5926 | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50A I(C) | TO-210AE | |
| 2N5927 | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100A I(C) | TO-114 | |
| 2N5928 | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100A I(C) | TO-114 | |
| 2N5929 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 30A I(C) | TO-3VAR | |
| 2N5930 | SEME-LAB[Seme | Bipolar Device Hermetically sealed Metal Package |
| 2N5931 | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 30A I(C) | TO-3VAR |
© 2026 - Semikonduktor datasheet Sitemap