2N DATASHEET
| PartNo | Tagagawa | Paglalarawan |
|---|---|---|
| 2N6187 | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-210AA | |
| 2N6188 | Solid States Devices, | HIGH SPEED TRANSISTOR VOLTS |
| 2N6189 | Solid States Devices, | HIGH SPEED TRANSISTOR VOLTS |
| 2N6190 | SEMICOA[Semicoa Semiconductor] | Chip Type 2C6193 Geometry 9700 Polarity |
| 2N6191 | SEMICOA[Semicoa Semiconductor] | Chip Type 2C6193 Geometry 9700 Polarity |
| 2N6192 | Central Semiconductor Corp | Small Signal Transistors |
| 2N6193 | CENTRAL[Central Semiconductor Corp] | Small Signal Transistors |
| 2N619302 | Semicoa Semiconductor | Silicon Transistor |
| 2N6193A | PNP | |
| 2N6193LCC4 | BJT | |
| 2N6193_02 | Semicoa Semiconductor | Silicon PNP Transistor |
| 2N6198 | COMMUNICATIONS | |
| 2N6199 | ASI[Advanced Semiconductor] | SILICON POWER TRANSISTOR |
| 2N6200 | ETC[ETC] | B40-28 WATTS VOLTS 100-200 |
| 2N6202 | TRANSISTOR | BJT | NPN | 33V V(BR)CEO | 500MA I(C) | STX-8 | |
| 2N6203 | TRANSISTOR | BJT | NPN | 33V V(BR)CEO | 1A I(C) | STX-8 | |
| 2N6204 | TRANSISTOR | BJT | NPN | 33V V(BR)CEO | 2A I(C) | STX-8 | |
| 2N6211 | MOSPEC[Mospec Semiconductor] | POWER TRANSISTORS(2A |
| 2N6212 | BOCA[Boca Semiconductor Corporation] | MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
| 2N6213 | MOSPEC[Mospec Semiconductor] | POWER TRANSISTORS(2A |
| 2N6214 | TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 2A I(C) | TO-66 | |
| 2N6215 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50A I(C) | TO-210AE | |
| 2N6216 | Inchange Semiconductor Company Limited | Silicon NPN Power Transistors |
| 2N6217 | Inchange Semiconductor Company Limited | Silicon NPN Power Transistors |
| 2N6218 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 50MA I(C) | TO-92VAR | |
| 2N6219 | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 50MA I(C) | TO-92VAR | |
| 2N6220 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 50MA I(C) | TO-92VAR | |
| 2N6221 | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92VAR | |
| 2N6225 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | TO-92VAR | |
| 2N6226 | SEME-LAB[Seme | Bipolar Device |
| 2N6227 | SEME-LAB[Seme | Bipolar Device |
| 2N6228 | SEMELAB | Bipolar Device Hermetically sealed Metal Package |
| 2N6229 | CENTRAL[Central Semiconductor Corp] | SILICON POWER TRANSISTOR |
| 2N6230 | SEME-LAB[Seme | Bipolar Device Hermetically sealed Metal Package |
| 2N6231 | Central Semiconductor | SILICON POWER TRANSISTOR |
| 2N6232 | Microsemi Corporation | SILICON TRANSISTOR |
| 2N6233 | MOTOROLA[Motorola, | AMPERE POWER TRANSISTOR SILICON |
| 2N6234 | SEME-LAB[Seme | Bipolar Device Hermetically sealed TO66 Metal Package. |
| 2N6235 | SEME-LAB[Seme | Bipolar Device Hermetically sealed TO66 Metal Package |
| 2N6235R | NPN | |
| 2N6235X | TRANSISTOR | BJT | NPN | 275V V(BR)CEO | 5A I(C) | TO-213AA | |
| 2N6240 | MOTOROLA[Motorola, | Silicon controlled Rectifiers Reverse Blocking Triode Thyristors |
| 2N6240/D | Silicon Controlled Rectifier | |
| 2N6245 | SEME-LAB[Seme | Bipolar Device Hermetically sealed TO66 Metal Package. |
| 2N6246 | ETC[ETC] | SILICON EPITAXIAL BASE HIGH POWER TRANSISTORS |
| 2N6247 | ETC[ETC] | SILICON EPITAXIAL BASE HIGH POWER TRANSISTORS |
| 2N6248 | ETC[ETC] | SILICON EPITAXIAL BASE HIGH POWER TRANSISTORS |
| 2N6249 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2N6250 | Inchange | Silicon Power Transistors |
| 2N6251 | Microsemi | Transistor |
| 2N6253 | SEME-LAB[Seme | Bipolar Device Hermetically sealed Metal Package |
| 2N6254 | SEME-LAB[Seme | BIPOLAR DEVICE HERMETICALLY SEALED METAL PACKAGE |
| 2N6255 | MICROSEMI[Microsemi Corporation] | MICROWAVE DISCRETE POWER TRANSISTORS |
| 2N6257 | Unknow | TO-3 Power Package Transistors |
| 2N6258 | SEMELAB | Bipolar Device Hermetically sealed Metal Package |
| 2N6259 | Mospec Semiconductor | POWER TRANSISTORS(16A,150V,150W) |
| 2N6260 | SEME-LAB[Seme | Bipolar Device |
| 2N6261 | CENTRAL[Central Semiconductor Corp] | Power Transistors |
| 2N6262 | SEME-LAB[Seme | Bipolar Device Hermetically sealed Metal Package.(150V, |
| 2N6263 | SEME-LAB[Seme | Bipolar Device |
| 2N6264 | SEME-LAB[Seme | Bipolar Device |
| 2N627 | TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 10A I(C) | TO-3 | |
| 2N6270 | SEME-LAB[Seme | Bipolar Device Hermetically sealed Metal Package. |
| 2N6271 | SEME-LAB[Seme | Bipolar Device Hermetically sealed Metal Package. |
| 2N6272 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 30A I(C) | TO-210AE | |
| 2N6273 | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 30A I(C) | TO-210AE | |
| 2N6274 | Semi | VOLTS WATTS |
| 2N6274A | NPN | |
| 2N6275 | Semi | VOLTS WATTS |
| 2N6275A | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50A I(C) | TO-204AE | |
| 2N6276 | SEME-LAB[Seme | Bipolar Device |
| 2N6276A | Seme LAB | TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 50A I(C) | TO-204AE |
| 2N6277 | Semi | VOLTS WATTS |
| 2N6277A | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| 2N6278 | SEMELAB | Bipolar Device Hermetically sealed Metal Package |
| 2N6279 | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50A I(C) | TO-210AE | |
| 2N628 | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-3 | |
| 2N6280 | TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 50A I(C) | TO-210AE | |
| 2N6281 | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50A I(C) | TO-210AE | |
| 2N6282 | Semi | VOLTS WATTS |
| 2N6283 | BOCA[Boca Semiconductor Corporation] | DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS |
| 2N6284 | STMicroelectronics | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 2N6284/D | Darlington Complementary Silicon Power Transistors | |
| 2N628406 | ONSEMI[ON Semiconductor] | Darlington Complementary Silicon Power Transistors |
| 2N6284_06 | ON Semiconductor | Darlington Complementary Silicon Power Transistors |
| 2N6285 | Semi | VOLTS WATTS |
| 2N6286 | ONSEMI[ON Semiconductor] | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N6287 | STMicroelectronics | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 2N6288 | Semi | 39-50-70VOLTS WATTS |
| 2N6289 | BOCA[Boca Semiconductor Corporation] | EPITAXIAL-BASE, SILICON N-P-N P-N-P VERSAWATT TRANSISTORS |
| 2N629 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3 | |
| 2N6290 | MOSPEC[Mospec Semiconductor] | POWER TRANSISTORS(7A40W) |
| 2N6291 | BOCA[Boca Semiconductor Corporation] | EPITAXIAL-BASE, SILICON N-P-N P-N-P VERSAWATT TRANSISTORS |
| 2N6292 | Semi | 39-50-70VOLTS WATTS |
| 2N6293 | BOCA[Boca Semiconductor Corporation] | EPITAXIAL-BASE SILICON N-P-N P-N-P VERSAWATT TRANSISTORS |
| 2N6294 | CENTRAL[Central Semiconductor Corp] | COMPLEMENTARY SILICON DARLINGTONl |
| 2N6295 | Seme | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR |
| 2N6296 | CENTRAL[Central Semiconductor Corp] | COMPLEMENTARY SILICON DARLINGTONl |
| 2N6297 | CENTRAL[Central Semiconductor Corp] | COMPLEMENTARY SILICON DARLINGTONl |
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