2N DATASHEET
| PartNo | Tagagawa | Paglalarawan |
|---|---|---|
| 2N6536 | Savantic, Inc. | Silicon NPN Power Transistors |
| 2N6537 | SEME-LAB[Seme | Bipolar Device |
| 2N654 | ETC[ETC] | alloy-junction germanium transistors |
| 2N6542 | BOCA[Boca Semiconductor Corporation] | SWCHMODE SERIES SILICON POWER TRANSISTORS |
| 2N6543 | CENTRAL[Central Semiconductor Corp] | POWER TRANSISTORS TO-3 CASE |
| 2N6544 | MOSPEC[Mospec Semiconductor] | POWER TRANSISTORS(8A,125W) |
| 2N6545 | MOSPEC[Mospec Semiconductor] | POWER TRANSISTORS(8A125W) |
| 2N6546 | MICROSEMI[Microsemi Corporation] | POWER SILICON TRANSISTOR |
| 2N6547 | Semi | AMPERE SILICON |
| 2N6547/D | Switchmode Series NPN Silicon Power Transistors | |
| 2N6548 | CENTRAL[Central Semiconductor Corp] | SILICON DARLINGTON TRANSISTORS |
| 2N6548N | TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 2A I(C) | TO-202VAR | |
| 2N6549 | CENTRAL[Central Semiconductor Corp] | Power Transistors |
| 2N6549N | TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 2A I(C) | TO-202VAR | |
| 2N655 | alloy-junction germanium transistors | |
| 2N6550 | INTERFET | N-Channel Silicon Junction Field-Effect Transistor |
| 2N6551 | Central Semiconductor Corp | Complementary Silicon Transistors manufactured epitaial planar process designed general purpose audio amplifier |
| 2N6551N | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-202VAR | |
| 2N6552 | CENTRAL[Central Semiconductor Corp] | Complementary Silicon Transistors manufactured epitaial planar process designed general purpose audio amplifier |
| 2N6552N | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-202VAR | |
| 2N6553 | CENTRAL[Central Semiconductor Corp] | Complementary Silicon Transistors manufactured epitaial planar process designed general purpose audio amplifier |
| 2N6553N | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-202VAR | |
| 2N6554 | CENTRAL[Central Semiconductor Corp] | Complementary Silicon Transistors manufactured epitaial planar process designed general purpose audio amplifier |
| 2N6554N | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-202VAR | |
| 2N6555 | CENTRAL[Central Semiconductor Corp] | Complementary Silicon Transistors manufactured epitaial planar process designed general purpose audio amplifier |
| 2N6555N | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-202VAR | |
| 2N6556 | CENTRAL[Central Semiconductor Corp] | Complementary Silicon Transistors manufactured epitaial planar process designed general purpose audio amplifier |
| 2N6556N | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-202VAR | |
| 2N6557 | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 500MA I(C) | TO-202AC | |
| 2N6557N | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 500MA I(C) | TO-202VAR | |
| 2N6558 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | TO-202AC | |
| 2N6558N | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | TO-202VAR | |
| 2N6559 | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 500MA I(C) | TO-202AC | |
| 2N6559N | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 500MA I(C) | TO-202AC | |
| 2N656 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5 | |
| 2N6560 | Seme | Bipolar Device Hermetically sealed Metal Package. |
| 2N6561 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 10A I(C) | TO-3 | |
| 2N6562 | TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC | |
| 2N6563 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 10A I(C) | TO-210AC | |
| 2N6564 | Boca Semiconductor Corporation | SCRs (Silicon Controlled Rectifiers) |
| 2N6565 | Central Semiconductor Corp | Amperes 1200 Volts |
| 2N6569 | Mospec Semiconductor | POWER TRANSISTORS(12A,40V,100W) |
| 2N656A | Small Signal Transistors | |
| 2N657 | SILICON PLANAR TRANSISTOR | |
| 2N6573 | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 10A I(C) | TO-3 | |
| 2N6574 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| 2N6575 | SemeLAB | Bipolar Device Hermetically sealed Metal Package |
| 2N6576 | CENTRAL[Central Semiconductor Corp] | SILICON POWER DARLINGTON TRANSISTOR |
| 2N6577 | Semi | AMPERE SILICON |
| 2N6578 | Semi | AMPERE SILICON |
| 2N6579 | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3 | |
| 2N657A | Central Semiconductor | Leaded Small Signal Transistor General Purpose |
| 2N658 | TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5 | |
| 2N6580 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-3 | |
| 2N6581 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| 2N6582 | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3 | |
| 2N6583 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| 2N6584 | TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-3 | |
| 2N6585 | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-210AC | |
| 2N6586 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-210AC | |
| 2N6587 | TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC | |
| 2N6588 | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-210AC | |
| 2N6589 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-210AC | |
| 2N659 | TRANSISTOR | BJT | PNP | 14V V(BR)CEO | 1A I(C) | TO-5 | |
| 2N6590 | TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC | |
| 2N6591 | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 500MA I(C) | TO-202AC | |
| 2N6591N | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 500MA I(C) | TO-202VAR | |
| 2N6592 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 500MA I(C) | TO-202AC | |
| 2N6592N | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 500MA I(C) | TO-202VAR | |
| 2N6593 | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 500MA I(C) | TO-202VAR | |
| 2N6593N | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 500MA I(C) | TO-202VAR | |
| 2N6594 | Boca Semiconductor Corporation | SILICON POWER TRANSISTOR |
| 2N660 | Central Semiconductor Corp | |
| 2N6604 | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | SOT-100VAR | |
| 2N6605 | Central Semiconductor Corp | SCRs |
| 2N6606 | Central Semiconductor Corp | SCRs |
| 2N6607 | Central Semiconductor Corp | SCRs |
| 2N6608 | Central Semiconductor Corp | SCRs |
| 2N6609 | Semi | Complementary Slllcon Powar Translstors |
| 2N6609**SPECIAL** | POWER TRANSISTOR | |
| 2N661 | alloy-junction germanium transistors | |
| 2N6617 | TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 10MA I(C) | MICRO-X | |
| 2N6618 | TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 10MA I(C) | SOT-100VAR | |
| 2N6619 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | TO-236 | |
| 2N662 | alloy-junction germanium transistors | |
| 2N6620 | Siemens | SILICON TRANSISTOR NOISE BROADBAND AMPLIFIER |
| 2N6621 | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | MACRO-T | |
| 2N663 | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 4A I(C) | TO-3 | |
| 2N6648 | Central Semiconductor Corp | POWER TRANSISTORS TO-3 CASE |
| 2N6649 | MOSPEC[Mospec Semiconductor] | POWER TRANSISTORS(10A100W) |
| 2N665 | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3 | |
| 2N6650 | MOSPEC[Mospec Semiconductor] | POWER TRANSISTORS(10A100W) |
| 2N6653 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. |
| 2N6654 | SEME-LAB[Seme | Bipolar Device Hermetically sealed Metal Package |
| 2N6655 | Seme LAB | Bipolar NPN Device |
| 2N6659 | Seme | N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
| 2N6660 | Supertex, | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 2N666007 | Supertex, | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 2N6660CSM4 | Seme LAB | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
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