2S DATASHEET
| PartNo | Tagagawa | Paglalarawan |
|---|---|---|
| 2SC2335-Z | Silicon transistor | |
| 2SC2335F | Savantic, | Silicon Power Transistors |
| 2SC2335K | TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 7A I(C) | TO-220AB | |
| 2SC2335L | Mospec Semiconductor | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB |
| 2SC2335M | Mospec Semiconductor | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB |
| 2SC2335O | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB | |
| 2SC2335R | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB | |
| 2SC2335Y | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB | |
| 2SC2336 | NEC[NEC] | PNP/NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC2336A | NEC[NEC] | PNP/NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC2336B | PNP/NPN SILICON EPITAXIAL TRANSISTOR | |
| 2SC2337 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2344 | Sanyo | PNP/NPN Epitaxial Planar Silicon Transistors |
| 2SC2344D | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-220AB | |
| 2SC2344E | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-220AB | |
| 2SC2344P | Sanyo Semicon Device | High-Voltage Switching, Power Amp,100W Output Predriver Applications |
| 2SC2347 | Toshiba | OSCILLATOR APPLICATIONS MIXER APPLICATIONS |
| 2SC234703 | Toshiba Semiconductor | Silicon Epitaxial Planar Type |
| 2SC2347_03 | Toshiba Semiconductor | Silicon NPN Epitaxial Planar Type |
| 2SC2348 | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | TO-92 | |
| 2SC2349 | TOSHIBA[Toshiba Semiconductor] | TRANSISTOR OSCILLATOR APPLICATIONS) |
| 2SC2351 | NEC[NEC] | SILICON HIGH FREQUNY TRANSISTOR |
| 2SC2351-E | NEC | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-346 |
| 2SC2351-F | NEC | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-346 |
| 2SC2351-P | NEC | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-346 |
| 2SC2351-Q | NEC | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-346 |
| 2SC2352 | NEC[NEC] | SILICON TRANSISTOR |
| 2SC2353 | NEC[NEC] | SILICON TRANSISTOR |
| 2SC2356 | FUJITSU[Fujitsu Media Devices Limited] | SILICON HIGH SPEED TRIPLE DIFFUSED POWER TRANSISTOR AMP,400 VOLT |
| 2SC2358 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2361 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2362 | Sanyo Semicon Device | High-Voltage Low-Noise Applications |
| 2SC236208 | Sanyo Semicon Device | High-Voltage Low-Noise Applications |
| 2SC2362F | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC2362G | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC2362H | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC2362K | Sanyo Semicon Device | High-Voltage Low-Noise Applications |
| 2SC2362K08 | Sanyo Semicon Device | High-Voltage Low-Noise Applications |
| 2SC2362KF | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC2362KG | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC2362KH | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC2362K_08 | Sanyo Semicon Device | High-Voltage Low-Noise Amp Applications |
| 2SC2362_08 | Sanyo Semicon Device | High-Voltage Low-Noise Amp Applications |
| 2SC2363 | PNP/NPN EPITAXIAL PLANAR TYPE SILICON TRANSISTOR | |
| 2SC2365 | Micro Electronic Instrument | TRANSISTOR |
| 2SC2367 | NEC | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC2368 | NEC[NEC] | SILICON TRANSISTOR |
| 2SC2369 | NEC[NEC] | SILICON HIGH FREQUNY TRANSISTOR |
| 2SC2371 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2373 | Mospec Semiconductor | POWER TRANSISTORS(7.5A,100V,40W) |
| 2SC2373K | Mospec Semiconductor | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | TO-220AB |
| 2SC2373L | Mospec Semiconductor | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | TO-220AB |
| 2SC2373M | Mospec Semiconductor | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | TO-220AB |
| 2SC2377 | Mospec Semiconductor | Silicon epitaxial planer type(For high-frequency amplification) |
| 2SC2377C | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 15MA I(C) | SC-71 | |
| 2SC2377D | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 15MA I(C) | SC-71 | |
| 2SC2379 | TRANSISTOR | BJT | NPN | 1.4A I(C) | SOT-123VAR | |
| 2SC2380 | TOSHIBA | Silicon Epitaxial Planar Type |
| 2SC2381 | TRANSISTOR | BJT | NPN | 6A I(C) | SOT-123VAR | |
| 2SC2383 | Toshiba Semiconductor | TRANSISTOR (COLOR VERT. DEFLECTION, CLASS SOUND OUTPUT APPLICATIONS) |
| 2SC238306 | Toshiba Semiconductor | Silicon Epitaxial Type Process) |
| 2SC2383O | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1A I(C) | TO-92VAR | |
| 2SC2383R | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1A I(C) | TO-92VAR | |
| 2SC2383Y | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1A I(C) | TO-92VAR | |
| 2SC2383_06 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT Process) |
| 2SC2389 | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC2389S | Toshiba Semiconductor | |
| 2SC2389SE | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SPAK | |
| 2SC2389SR | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SPAK | |
| 2SC2389SS | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SPAK | |
| 2SC2390 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC2391 | TRANSISTOR | BJT | NPN | 800MA I(C) | SOT-123VAR | |
| 2SC2395 | Toshiba Semiconductor | TRANSISTOR (2~30MHz LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE |
| 2SC2396 | Renesas Technology Corp | Silicon Epitaxial |
| 2SC23962SC25432SC2544 | hitachi | Silicon Epitaxial |
| 2SC2396D | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2396E | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2396F | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2396|2SC2543 | ||
| 2SC2404 | Matsshita Panasonic | Transistor |
| 2SC2404B | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 15MA I(C) | TO-236 | |
| 2SC2404C | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 15MA I(C) | TO-236 | |
| 2SC2404D | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 15MA I(C) | TO-236 | |
| 2SC2405 | Matsshita Panasonic | Transistor |
| 2SC2405/2SC2406 | 2SC2405. 2SC2406 - NPN Transistor | |
| 2SC2405R | Panasonic Semiconductor | TRIPLE DIFFUSED MESA |
| 2SC2405S | Panasonic Semiconductor | TRIPLE DIFFUSED MESA |
| 2SC2405T | Panasonic Semiconductor | Triple Diffused Mesa |
| 2SC2406 | Matsshita Panasonic | Transistor |
| 2SC2406R | Panasonic Semiconductor | Triple Diffused Mesa |
| 2SC2406S | Panasonic Semiconductor | Triple Diffused Mesa |
| 2SC2406T | Panasonic Semiconductor | Triple Diffused Mesa |
| 2SC2408 | Inchange Semiconductor Company Limited | Silicon Transistor |
| 2SC2410 | TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2410S | TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | SPAK | |
| 2SC2411 | SeCoS | Transistor Plastic-Encapsulate Transi stors |
| 2SC2411K | Rohm | Medium Power Transistor 0.5A) |
| 2SC2411KCP | TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 600MA I(C) | SOT-23 | |
| 2SC2411KCQ | TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 600MA I(C) | SOT-23 |
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