2S DATASHEET
| PartNo | Tagagawa | Paglalarawan |
|---|---|---|
| 2SC2480T | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | TO-236 | |
| 2SC2481 | Inchange | Silicon Power Transistor |
| 2SC2482 | Toshiba Semiconductor | TRANSISTOR (HIGH VOLTAGE SWITCHING COLOR HORIZ. DRIVER, CHROMA OUTPUT APPLICATIONS) |
| 2SC248206 | Toshiba Semiconductor | Silicon Epitaxial Type Process) |
| 2SC2482_06 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT Process) |
| 2SC2483 | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-202 | |
| 2SC2484 | Panasonic Semiconductor | SILICON EPITAXAL BASE VLESA TRANSISTOR |
| 2SC2485 | Panasonic Semiconductor | SILICON EPITAXAL BASE LESA TRANSISTOR |
| 2SC2486 | PANASONIC[Panasonic Semiconductor] | SILICON EPITAXAL BASE LESA TRANSISTOR |
| 2SC2488 | PANASONIC[Panasonic Semiconductor] | EPITAXIAL MESA |
| 2SC2489 | Panasonic Semiconductor | |
| 2SC2497 | PANASONIC[Panasonic Semiconductor] | Silicon epitaxial planar type(For low-frequency power amplification) |
| 2SC2497/2SC2497A | 2SC2497. 2SC2497A - NPN Transistor | |
| 2SC2497A | PANASONIC[Panasonic Semiconductor] | Silicon epitaxial planar type(For low-frequency power amplification) |
| 2SC2497AP | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126 | |
| 2SC2497AQ | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126 | |
| 2SC2497AR | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126 | |
| 2SC2497AS | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126 | |
| 2SC2497P | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-126 | |
| 2SC2497Q | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-126 | |
| 2SC2497R | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-126 | |
| 2SC2497S | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-126 | |
| 2SC2498 | Toshiba Semiconductor | TRANSISTOR (VHF~UHF BAND NOISE AMPLIFIER APPLICATION) |
| 2SC2499 | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 | |
| 2SC2500 | Toshiba Semiconductor | TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) |
| 2SC250006 | Toshiba Semiconductor | Silicon Epitaxial Type Process) |
| 2SC2500A | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92VAR | |
| 2SC2500B | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92VAR | |
| 2SC2500C | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92 | |
| 2SC2500D | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92VAR | |
| 2SC2500_06 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT Process) |
| 2SC2501 | Shindengen Electric | TRANSISTOR |
| 2SC2502 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2504 | ETC[ETC] | 2SC2504 |
| 2SC2507 | Inchange | Silicon Power Transistor |
| 2SC2508 | TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 6A I(C) | SOT-123VAR | |
| 2SC2509 | TOSHIBA | SILICON EPITAXIAL PLANAR TYPE |
| 2SC2510 | Toshiba Semiconductor | TRANSISTOR (2~30MHz LINEAR POWER AMPLIFIER APPLICATIONS SUPPLY VOLTAGE |
| 2SC2510A | Toshiba Semiconductor | SILICON EPITAXIAL PLANAR TYPE |
| 2SC2512 | Hitachi Semiconductor | Silicon Triple Diffused |
| 2SC2516 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2517 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2517-S | Silicon transistor | |
| 2SC2517-Z | Silicon transistor | |
| 2SC2517K | NEC | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SC2517L | NEC | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SC2517M | NEC | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SC2518 | NEC[NEC] | SILICON POWER TRANSISTOR |
| 2SC2518K | NEC | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SC2518L | NEC | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SC2518M | NEC | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SC2519 | Panasonic Semiconductor | SILICON EPITAXIAL PLANAR |
| 2SC2522 | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 12A I(C) | TO-3 | |
| 2SC2522A | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 12A I(C) | TO-3 | |
| 2SC2523 | Inchange | Silicon Power Transistors |
| 2SC2525 | Toshiba Semiconductor | TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
| 2SC2526 | Fujitsu Media Devices Limited | SILICON HIGH SPEED POWER TRANSISTOR |
| 2SC2527 | Fujitsu Media Devices Limited | SILICON HIGH SPEED POWER TRANSISTOR |
| 2SC2528 | Fujitsu Media Devices Limited | SILICON HIGH SPEED POWER TRANSISTOR |
| 2SC2530 | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-220 | |
| 2SC2531 | TRANSISTOR | BJT | NPN | 30MA I(C) | MICRO-T | |
| 2SC2532 | Toshiba | AUDIO FREQUENCY AMPLIFIER APPLICATIONS DRIVER STAGE LAMP APPLICATIONS TEMPERATURE COMPENSATION APPLICATIONS |
| 2SC253203 | Toshiba | TRANSISTOR (AUDIO FREQUENCY AMPLIFIER, DRIVER STAGE LAMP, TEMPERATURE COMPENSATION APPLICATIONS) |
| 2SC2532_03 | Toshiba Semiconductor | TRANSISTOR (AUDIO FREQUENCY AMPLIFIER, DRIVER STAGE FOR LED LAMP, TEMPERATURE COMPENSATION APPLICATIONS) |
| 2SC2534 | Toshiba | (2SCxxxx) Transistor |
| 2SC2535 | Toshiba | (2SCxxxx) Transistor |
| 2SC2538 | ||
| 2SC2539 | Mitsubishi | TRANSISTOR,BJT,NPN,17V V(BR)CEO,3.5A |
| 2SC2540 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) |
| 2SC2542 | ETC[ETC] | MOLD TYPE BIPOLAR TRANSISTORS |
| 2SC2543 | Renesas Technology Corp | Silicon Epitaxial |
| 2SC2543D | TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2543E | TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2543F | TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2544 | Renesas Technology Corp | Silicon Epitaxial |
| 2SC2544D | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2544E | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2545 | Hitachi Semiconductor | Silicon Epitaxial |
| 2SC25452SC25462SC2547 | hitachi | Silicon Epitaxial |
| 2SC2545D | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2545E | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2545ETZ-E | Renesas Technology Corp | Silicon Epitaxial |
| 2SC2545F | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2545FTZ-E | Renesas Technology Corp | Silicon Epitaxial |
| 2SC2545|2SC2546 | ||
| 2SC2546 | Renesas Technology Corp | Silicon Epitaxial |
| 2SC2546D | TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2546E | TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2546F | TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2546FTZ-E | Renesas Technology Corp | Silicon Epitaxial |
| 2SC2547 | Hitachi Semiconductor | Silicon Epitaxial |
| 2SC2547D | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2547E | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | TO-92 | |
| 2SC2547ETZ-E | Renesas Technology Corp | Silicon Epitaxial |
| 2SC2548 | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | TO-92 | |
| 2SC2550 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-18 | |
| 2SC2551 | Toshiba Semiconductor | TRANSISTOR (HIGHT VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE TUBE BRIGHTNESS CONTROL APPLICATIONS) |
| 2SC255107 | Toshiba Semiconductor | TOSHIBA Transistor Silicon Epitaxial Type process) |
| 2SC2551O | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-92 |
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